[15p-S4_203-1~16] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-S4_203-7] B doping into Si using ion implantation and KrF excimer laser annealing

〇(M1)Takumi Narazaki¹, Ktatayama Keita^1,2, Liu Yifan¹, Hisato Yabuta^1,2 (1.ISEE, Kyushu Univ., 2.GigaphotonNextGLP, Kyushu Univ.)

Keywords:

epitxial grouth,KrF eximer laser,doping

In this study, boron atoms were implanted into the surface of a silicon substrate using ion implantation, followed by laser annealing with a KrF excimer laser to attempt boron doping of the silicon substrate. Measurement of the sheet resistance of the samples after laser irradiation revealed that the sheet resistance decreased in the irradiated region as the fluence increased. Furthermore, at fluences exceeding 1.2 J/cm², the degree of reduction in sheet resistance became smaller.