[15p-SL_101-1~17] CS.4 Code-sharing Session of 6.1 & 15.4

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[15p-SL_101-11] Growth of wurtzite Sc 50% Sc_0.5Al_0.5N piezoelectric thin films using Sc_0.4Al_0.6N buffer

〇Ayaka Katsumata^1,2, Takahiko Yanagitani^1,2 (1.Waseda Univ., 2.ZAIKEN)

Keywords:

piezoelectricity

ScAlN is widely used as a piezoelectric thin-film material for BAW filters due to its high electromechanical coupling constant kt2. As the amount of Sc increases, kt2 also increases; however, when the Sc concentration exceeds 43%, a phase transition occurs from wurtzite to a non-piezoelectric cubic crystal structure. In this study, the effect of Sc addition was investigated by comparing the antielectric field of Sc_0.5Al_0.5N with that of a Sc-doped ScAlN piezoelectric thin film containing 40% Sc in the buffer layer.