The 73rd JSAP Spring Meeting 2026
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Oral presentationCS Code-sharing session : 【CS.4】Code-sharing Session of 6.1 & 15.4

[15p-SL_101-1~17]CS.4 Code-sharing Session of 6.1 & 15.4

Sun. Mar 15, 2026 1:45 PM - 6:30 PM JST
Sun. Mar 15, 2026 4:45 AM - 9:30 AM UTC
SL_101 (South Lecture Bldg.)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[15p-SL_101-1][The 59th Young Scientist Presentation Award Speech] Epitaxial growth of cubic boron scandium nitride layers

〇Ryota Maeda1, Yoshitaka Taniyasu1, Kazuhide Kumakura1, Kakeru Ninomiya2, Maiko Nishibori2, Kazuyuki Hirama1 (1.NTT BRL, 2.Tohoku Univ.)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-SL_101-2]Structural and electrical characterization of NbAlN/AlGaN/AlN/GaN heterostructures

〇Tomoya Okuda1, Souta Kurogi2, Yusuke Wakamoto3, Takuya Maeda3, Kazuhisa Ikeda1,2, Atsushi Kobayashi1,2 (1.Tokyo Univ. of Science, 2.Tokyo Univ. of Science graduate school, 3.The Univ. of Tokyo graduate school)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-SL_101-3]Epitaxial Growth of BAlN films by Sputtering

〇Kazuhisa Ikeda1, Yuto Shibuya1, Atsushi Kobayashi1 (1.Tokyo Univ. of Science)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[15p-SL_101-4]Fabrication and characterization of oxygen doped ferroelectric AlBN films

〇Kazuki Okamoto1,2, Mercer Ian2, Hiroshi Funakubo1, Maria Jon-Paul2 (1.Science Tokyo, 2.Penn State)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-SL_101-5]Sc and B doping in Wurtzite-structured Heterovalent Ternary Nitride MgSiN2 Thin Films

〇(DC)Sotaro Kageyama1, Kazuki Okamoto1, Yoshiomi Hiranaga2, Hiroshi Funakubo1 (1.Science Tokyo, 2.Tohoku Univ.)
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-SL_101-6]Growth and characterization of AlYN layers grown by MOCVD

〇Shun Narita1, Yudai Shimizu1, Daisuke Iida1, Keitaro Ikejiri1, Kazutada Ikenaga1 (1.Taiyo Nippon Sanso Corporation)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-SL_101-7]Fabrication and structural/physical property evaluation
of Y1-xAlxN thin films by Pulsed Laser Deposition

〇Ryosuke Takagi1, Syuhei Hasimoto1, Kazuki Yamamoto1, Koji Iwasaki1, Seiji Nakashima1, Kaito Fujitani1, Yasushi Hotta1 (1.Hyogo Univ.)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[15p-SL_101-8]Epitaxial Growth of NbAlN Films on GaN by Sputtering

〇Souta Kurogi1, Riku Kikuchi2, Takahiro Kawamura3, Kazuhisa Ikeda1,2, Atsushi Kobayashi1,2 (1.Tokyo Univ. of Science, 2.Grad. School of Tokyo Univ. of Science, 3.Mie Univ.)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-SL_101-9]X-ray Spectroscopic Characterization of Surface Oxidation of NbAlN Thin Films Epitaxially Grown by Sputtering on GaN

〇Hikaru Sasaki1, Takahito Takeda1, Akihira Munakata1, Masaki Kobayashi1, Atsushi Fujimori1, Tomoya Okuda2, Souta Kurogi2, Atsushi Kobayashi2, Takuya Maeda1 (1.Univ. of Tokyo, 2.Tokyo Univ. of Science)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)English Presentation

[15p-SL_101-10]Single Crystal ScAlN Growth by RF-MBE Method

〇Trang Nakamoto1, Hayato Nishi2, Takashi Fujii3, Tsutomu Araki2 (1.Ritsumeikan Univ. R-GIRO, 2.Ritsumeikan Univ. Col. of Sci. & Eng., 3.Ritsumeikan Univ. ROST)
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[15p-SL_101-11]Growth of wurtzite Sc 50% Sc0.5Al0.5N piezoelectric thin films using Sc0.4Al0.6N buffer

〇Ayaka Katsumata1,2, Takahiko Yanagitani1,2 (1.Waseda Univ., 2.ZAIKEN)
5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-SL_101-12]Ferroelectric hysteresis of AlScN grown on semiconductors with different doping concentrations

〇Miyu Kawai1, Ken Shiraishi1, Kyota Mikami1, Tunenobu Kimoto1, Mituaki Kaneko1 (1.Kyoto Univ.)
5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[15p-SL_101-13]Fabrication and characterization of ScAlN/AlN/GaN heterostructures

〇Sawaki Sato1, Kazuhisa Ikeda1, Takuya Maeda2, Hiroshi Funakubo3, Atsushi Kobayashi1 (1.Tokyo Univ. of Science, 2.The Univ. of Tokyo, 3.Institute of Science Tokyo)
5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[15p-SL_101-14]Thickness Scaling of Pt/(Al0.9Sc0.1)N/Pt Capacitors to 30 nm for Ferroelectric Memory Applications

〇(D)Soshun Doko1,2, Naoko Matsui1, Toshikazu Irisawa1, Koji Tsunekawa1, Nana Sun2, Yoshiko Nakamura2, Kazuki Okamoto2, Hiroshi Funakubo2 (1.Canon ANELVA, 2.Science Tokyo)
5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[15p-SL_101-15]Deposition Process Development of 40 nm Pt/(Al0.9Sc0.1)N/Pt Capacitor Stacks for Integration onto 300 mm Si Wafers

〇(D)Soshun Doko1,2, Naoko Matsui1, Toshikazu Irisawa1, Koji Tsunekawa1, Kazuki Okamoto2, Hiroshi Funakubo2 (1.Canon ANELVA, 2.Science Tokyo)
6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-SL_101-16]Ferroelectric Properties of AlScN Epitaxial Thin Films on Si Substrates

〇Yusuke Aoki1, Koki Yasuoka1, Norifumi Fujimura1, Takeshi Yoshimura1 (1.Osaka Metro. Univ.)
6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-SL_101-17]Conduction Characteristics in Epitaxial Pt/AlScN/TiN Heterostructures

〇Koki Yasuoka1, Yusuke Aoki1, Norifumi Fujimura1, Takeshi Yosimura1 (1.Osaka Metro. Univ.)
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