[15p-SL_101-1~17] CS.4 Code-sharing Session of 6.1 & 15.4

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[15p-SL_101-14] Thickness Scaling of Pt/(Al_0.9Sc_0.1)N/Pt Capacitors to 30 nm for Ferroelectric Memory Applications

〇(D)Soshun Doko^1,2, Naoko Matsui¹, Toshikazu Irisawa¹, Koji Tsunekawa¹, Nana Sun², Yoshiko Nakamura², Kazuki Okamoto², Hiroshi Funakubo² (1.Canon ANELVA, 2.Science Tokyo)

Keywords:

AlScN,logic-embedded memory,Ferroelectric memory

(Al,Sc)N films exhibit a large remanent polarization and excellent thermal stability, making them strong candidates for emerging non-volatile memory applications. We investigated the scaling of capacitor stacks and successfully achieved a total stack thickness of 30 nm, consisting of 5 nm Pt bottom electrode, 20 nm (Al_0.9Sc_0.1)N layer, and 5 nm Pt top electrode. In this study, we report the impact of thinning the Pt top electrode on the ferroelectricity.