[15p-SL_101-1~17] CS.4 Code-sharing Session of 6.1 & 15.4

6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-SL_101-16] Ferroelectric Properties of AlScN Epitaxial Thin Films on Si Substrates

〇Yusuke Aoki¹, Koki Yasuoka¹, Norifumi Fujimura¹, Takeshi Yoshimura¹ (1.Osaka Metro. Univ.)

Keywords:

Ferroelectric thin films,AlScN,Wurtzite structure

Most reports on AlScN thin films grown on Si substrates have focused on textured films, whereas epitaxial AlScN thin films have predominantly been demonstrated on Al₂O₃ substrates. In this study, we achieved epitaxial growth of AlScN thin films on Si by employing TiN as a buffer layer, and we confirmed the crystalline quality and evaluated the ferroelectric properties.