[15p-SL_101-1~17] CS.4 Code-sharing Session of 6.1 & 15.4

6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-SL_101-17] Conduction Characteristics in Epitaxial Pt/AlScN/TiN Heterostructures

〇Koki Yasuoka¹, Yusuke Aoki¹, Norifumi Fujimura¹, Takeshi Yosimura¹ (1.Osaka Metro. Univ.)

Keywords:

ferroelectric thin films,AlScN,Ferroelectric diode

Al_1-XSc_XN (AlScN), which exhibits a large spontaneous polarization and CMOS compatibility, has attracted significant attention as a next-generation memory material since the discovery of its ferroelectricity. In this study, with the aim of fabricating a ferroelectric diode (FeD), a metal/ferroelectric/metal structure was prepared by sandwiching an epitaxial AlScN thin film between Pt and TiN electrodes on a Si substrate. From the obtained electrical characteristics, we investigated the effects of the electrode work function difference and ferroelectric polarization on the conduction mechanism.