[15p-SL_101-1~17] CS.4 Code-sharing Session of 6.1 & 15.4

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-SL_101-7] Fabrication and structural/physical property evaluation
of Y1-_xAl_xN thin films by Pulsed Laser Deposition

〇Ryosuke Takagi¹, Syuhei Hasimoto¹, Kazuki Yamamoto¹, Koji Iwasaki¹, Seiji Nakashima¹, Kaito Fujitani¹, Yasushi Hotta¹ (1.Hyogo Univ.)

Keywords:

Aluminum nitride,Yttrium,Pulsed Laser Deposition

Enhancing the piezoelectric properties of AlN necessitates trivalent ion doping at the aluminium sites, typically using expensive Sc doping. In recent years, lower-cost Y has attracted attention; however, high piezoelectric properties at high solid solubility have not been realised due to reduced crystallinity and degradation in thin-film quality caused by oxidation. Therefore, we formed YAlN thin films using the PLD method, which has not been previously reported, and demonstrated that it enables the formation of highly crystalline thin films compared to other methods. This presentation reports on the atomic composition ratio and piezoelectric properties of the formed YAlN.