[15p-SL_101-1~17] CS.4 Code-sharing Session of 6.1 & 15.4

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-SL_101-9] X-ray Spectroscopic Characterization of Surface Oxidation of NbAlN Thin Films Epitaxially Grown by Sputtering on GaN

〇Hikaru Sasaki¹, Takahito Takeda¹, Akihira Munakata¹, Masaki Kobayashi¹, Atsushi Fujimori¹, Tomoya Okuda², Souta Kurogi², Atsushi Kobayashi², Takuya Maeda¹ (1.Univ. of Tokyo, 2.Tokyo Univ. of Science)

Keywords:

NbAlN,X-ray spectroscopy,surface oxidation

NbAlN thin films were epitaxially grown on GaN by sputtering, and their chemical bonding states and surface oxidation were characterized using X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS). In the XPS Nb 3d spectra, the relative intensity of components with higher binding energies increased as the photon energy decreased. This trend suggests that significant surface oxidation occurs within approximately 1–2 nm of the sample surface. Furthermore, the relative decrease in high-binding-energy components with increasing Nb content indicates that Nb has a lower oxygen affinity than Al, suggesting that higher Nb compositions may effectively suppress surface oxidation. The Nb M-edge XAS spectra exhibited peaks reflecting O_h symmetry, implying that the local environment around Nb at the surface possesses a cubic-like structure with O_h symmetry.