[15p-W2_401-1~14] 15.4 III-V-group nitride crystals

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-W2_401-11] Quantum-well-resolved evaluation of recombination kinetics in InGaN multiple quantum wells: an insight into the role of luminescence enhancement in InGaN underlayer systems

〇(M2)Itsuki Shimbo¹, Hiroki Tosa¹, Keito Mori-Tamamura¹, Atsushi A. Yamaguchi¹, Kazunori Iwamitsu², Shigetaka Tomiya² (1.Kanazawa Inst. of Tech., 2.NAIST)

Keywords:

InGaN quantum well,Luminescence enhancement,Radiative and nonradiative recombination

In InGaN quantum wells, crystalline defects and piezoelectric polarization are considered major factors that degrade radiative efficiency, whereas underlayer (UL) and multiple quantum well (MQW) structures are regarded as effective approaches for enhancing emission efficiency. However, in UL structures, the mechanisms responsible for luminescence enhancement—such as the reduction of crystalline defects and the relaxation of the quantum-confined Stark effect (QCSE)—have not yet been fully clarified. In this study, radiative and nonradiative recombination rates were separately evaluated for InGaN quantum well samples with and without a UL, as well as for MQW samples, by combining simultaneous photoacoustic and photoluminescence (PA-PL) measurements with time-resolved photoluminescence (TRPL) measurements. This approach enabled an investigation of the luminescence enhancement mechanisms associated with each structure.