[15p-W2_401-1~14] 15.4 III-V-group nitride crystals | The 73rd JSAP Spring Meeting 2026

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Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[15p-W2_401-1~14]15.4 III-V-group nitride crystals

Sun. Mar 15, 2026 1:00 PM - 5:45 PM JST
Sun. Mar 15, 2026 4:00 AM - 8:45 AM UTC

W2_401 (West Bldg. 2)

1:00 PM - 1:30 PM JST(4:00 AM - 4:30 AM UTC)

[15p-W2_401-1][The 16th Compound Semiconductor Electronics Achievement Award Speech] Pioneering Scientific Principles and Social Implementation of Semiconductor Intracenter Photonics

〇Yasufumi Fujiwara¹ (1.Ritsumeikan Univ.)

1:45 PM - 2:15 PM JST(4:45 AM - 5:15 AM UTC)

[15p-W2_401-2][The 47th Paper Award Speech] Monolithic Integration of GaInN-Based RGB µLEDs via Tunnel Junction and Crystal Growth

〇Tatsunari Saito¹, Naoki Hasegawa¹, Keigo Imura¹, Yoshinobu Suehiro¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Daisuke Iida², Kazuhiro Ohkawa² (1.Meijo Univ., 2.KAUST)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-W2_401-3]Electrical and Optical Characterization of Tunnel-Junction-Based Monolithically Stacked GaInN μLEDs

〇(M1)Keisuke Takeya¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Yoshinobu Suehiro¹, Yuki Shimizu¹, Koko Fukushima¹ (1.Meijo Univ.)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-W2_401-4]Impact of pixel-size-aware current spreading design on the characteristics of stacked μLEDs

〇Koko Fukushima¹, Yuki Shimizu¹, Keisuke Takeya¹, Yoshinobu Suehiro¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ.)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[15p-W2_401-5]Fabrication of polyhedral InGaN LED structures covering full-color spectral range toward micro-LED displays

Taiki Ono¹, 〇Yoshinobu Matsuda¹, Mitsuru Funato¹ (1.Kyoto Univ.)

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[15p-W2_401-6]A bias power dependence study of GaN micro-LED fabrication using neutral beam etching

〇Xue-Lun Wang¹, Daisuke Ohori², Seiji Samukawa^3,2 (1.AIST, 2.IFS, Tohoku Univ., 3.NYCU)

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[15p-W2_401-7]Structural analysis of anomalous growth islands on long wavelength InGaN quantum wells

〇Yoshinobu Matsuda¹, Mitsuru Funato¹ (1.Kyoto Univ.)

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[15p-W2_401-8]Spectral design for wavelength division multiplexed visible light communication using InGaN-based LEDs

〇(B)Shosei Fujita¹, Yoshinobu Matsuda¹, Mitsuru Funato¹ (1.Kyoto Univ.)

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-W2_401-9]Analysis of Emission Acceleration in InGaN/GaN Multi-Quantum Wells via Plasmon Boosted Cooperative Emission

〇Atsushi Okada¹, Shunsuke Murai¹, Tetsuya Matsuyama¹, Kenji Wada², Hiroyoshi Naito^1,3, Koichi Okamoto¹ (1.Osaka Metro. Univ., 2.OMU-ESCARI, 3.Ritsumeikan Univ.)

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[15p-W2_401-10]Strong coupling condition tuning between photonic and plasmonic bands in InGaN-based nanocolumn plasmonic crystals

〇Hiroto Otsuka¹, Ryoma Shirotori¹, Jumpei Yamada^2,4, Koichi Okamoto⁵, Rie Togashi^3,4, Katsumi Kishino⁴, Takao Oto¹ (1.Yamagata Univ., 2.Keio Univ., 3.Sophia Univ., 4.Sophia Nanotech. Res. Center., 5.Osaka Metro. Univ.)

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-W2_401-11]Quantum-well-resolved evaluation of recombination kinetics in InGaN multiple quantum wells: an insight into the role of luminescence enhancement in InGaN underlayer systems

〇(M2)Itsuki Shimbo¹, Hiroki Tosa¹, Keito Mori-Tamamura¹, Atsushi A. Yamaguchi¹, Kazunori Iwamitsu², Shigetaka Tomiya² (1.Kanazawa Inst. of Tech., 2.NAIST)

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-W2_401-12]Temperature and wavelength dependence of photoluminescence lifetime in InGaN quantum wells with different alloy composition

〇Ririka Yamagata¹, Soma Hatanaka¹, Soya Yamagishi¹, Itsuki Shimbo¹, Atsushi A. Yamaguchi¹, Kazunori Iwamitsu², Shigetaka Tomiya² (1.Kanazawa Inst. of Tech., 2.NAIST)

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[15p-W2_401-13]Spatial Luminescence Characterization of InGaN Single Quantum Wells and Underlayer-Inserted Quantum Wells Using Cathodoluminescence Spectral Imaging

〇(M1)Daichi Tsujii¹, Ryunosuke Fuku¹, Zentaro Akase¹, Kazunori Iwamitsu¹, Shigetaka Tomiya¹ (1.NAIST)

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[15p-W2_401-14]Evaluation of Recombination Dynamics Inhomogeneity in InGaN Quantum Wells by Time-Resolved Photoluminescence Lifetime Distribution Analysis

〇Kazunori Iwamitsu¹, Itsuki Shimbo², Zentaro Akase¹, Toshiya Yokogawa¹, Atsushi Yamaguchi², Shigetaka Tomiya¹ (1.NAIST, 2.Kanazawa Inst. of Tech.)

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