[15p-W2_401-1~14] 15.4 III-V-group nitride crystals

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[15p-W2_401-6] A bias power dependence study of GaN micro-LED fabrication using neutral beam etching

〇Xue-Lun Wang¹, Daisuke Ohori², Seiji Samukawa^3,2 (1.AIST, 2.IFS, Tohoku Univ., 3.NYCU)

Keywords:

micro-LED,neutral beam etching

Bias power dependence of etching rates and emission efficiencies of InGaN/GaN green micro-LEDs fabricated by neutral beam etching was studied. It was demonstrated that increasing the bias power is a useful means of improving the etching rate of InGaN/GaN micro-LEDs.