[15p-W2_402-1~12] 15.5 Group IV crystals and alloys

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[15p-W2_402-1] Richardson constant for p-type Ge considering potential fluctuations

〇Tatsuro Maeda¹, Hiroyuki Ishii¹, Chia-Tsong Chen¹, Takashi Koida¹, Kouya Kudou¹, Wen Hsin Chang¹ (1.AIST)

Keywords:

germanium,Schottky barrier,Richardson constant

This study analyzes the temperature dependence of the I–V characteristics of a p-type Ge Schottky barrier diode (SBD) using a conductive oxide film as the electrode. By considering potential fluctuations in the Schottky barrier, we derive a Richardson constant (A*) close to the theoretical value, which we report here.