[15p-W2_402-1~12] 15.5 Group IV crystals and alloys

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[15p-W2_402-7] Ge concentration dependence of critical thickness of SiGe layer in CVD-SiGe/Si(110) structure

〇Koji Usuda¹, Kiu Inami^2,3, Naoto Kumagai^3,4, Toshifumi Irisawa^3,4, Atsushi Ogura^1,2 (1.MREL, Meiji Univ., 2.Meiji Univ., 3.SFRC, AIST, 4.LSTC)

Keywords:

SiGe,Si(110),critical thickness

To realize NS channel GAAFETs for the 2nm generation and beyond, it is important to establish a technique for depositing SiGe thin films on Si(110). It is predicted that relaxation occurs at thinner SiGe films than films deposited on Si(100), and investigation of the critical thickness is essential to achieving defect-free SiGe films. In the previous paper, we investigated a method for evaluating the relaxation of SiGe thin films by examining the presence of hatches on the SiGe/Si(110) surface. In this paper, we will report the critical thickness of SiGe thin films on Si(110) with different Ge concentrations using the method.