[15p-W8E_101-1~13] 13.3 Insulator technology

1:30 PM - 2:00 PM JST(4:30 AM - 5:00 AM UTC)

[15p-W8E_101-1] [The 3rd Kenji Natori Award Speech] Contribution to Research and Development of Ultra-thin Silicon Oxide Film Formation Technology and Mass Production of Non-volatile Memory Technolog

〇Minami Shin'ichi¹, Kamigaki Yoshiaki¹, Hagiwara Takaaki¹ (1.Hitachi CRL)

Keywords:

ultra-thin silicon oxide film,MONOS,non-volatile semiconductor memory

In the late 1970s, we did basic research focusing on ultra-thin silicon oxide films, which were thought to be extremely difficult to achieve in integrated circuits. We then deployed the basic techniques in mass production sites, linking them to the major business of non-volatile memories and leading to further business development. Meanwhile, this technology is also being applied to highly integrated charge-trapping non-volatile memories. In other words, this is not just the business development of one company, but has brought basic process technology to the forefront of mass production technology, which we believe to be a particularly noteworthy achievement.