The 73rd JSAP Spring Meeting 2026
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Session Details

Oral presentation13 Semiconductors : 13.3 Insulator technology

[15p-W8E_101-1~13]13.3 Insulator technology

Sun. Mar 15, 2026 1:30 PM - 5:15 PM JST
Sun. Mar 15, 2026 4:30 AM - 8:15 AM UTC
W8E_101 (West Bldg. 8)
1:30 PM - 2:00 PM JST(4:30 AM - 5:00 AM UTC)

[15p-W8E_101-1][The 3rd Kenji Natori Award Speech] Contribution to Research and Development of Ultra-thin Silicon Oxide Film Formation Technology and Mass Production of Non-volatile Memory Technolog

〇Minami Shin'ichi1, Kamigaki Yoshiaki1, Hagiwara Takaaki1 (1.Hitachi CRL)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[15p-W8E_101-2]Stress-relaxation model for thermal oxide films grown on Si (100) at low temperature

〇Eiji Kamiyama1,2, Koji Sueoka2 (1.GlobalWafers Japan Co., Ltd., 2.Okayama Pref. Univ.)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[15p-W8E_101-3]Atomic Scale Insights into Structures of Si Thermal Oxide/Si Interface

〇Hiroyuki Kageshima1, Insung Seo1, Toru Akiyama2, Kenji Shiraishi3 (1.Shimane Univ., 2.Mie Univ., 3.Tohoku Univ.)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[15p-W8E_101-4]Effect of annealing < 200 oC in water vapor on reduction of OH groups in low-temperature Si oxide films

〇Susumu Horita1, (M1) Makoto Kozasa2, (B) Syouya Nagae2, (B) Kouta Maruhashi2, Youki Katamune2, Akira Izumi2 (1.JAIST, 2.Kyutech)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[15p-W8E_101-5]Reaction mechanism of Si wet oxidation: Role of solid solution H2O in SiO2 layer

Gakuto Imaizumi1, Yuki Okabe1, Yasutaka Tsuda2, Akitaka Yoshigoe2, Yuji Takakuwa3, 〇Shuichi Ogawa1 (1.Nihon Univ., 2.JAEA, 3.Tohoku Univ.)
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[15p-W8E_101-6]Fabrication of SiO2/Si Structures by Solution Oxidation Using Sulfuric Acid

〇Shouhei Onizuka1, Hoshiki Harata1, Tomo Ueno1, Yoshitaka Iwazaki1 (1.Noko Univ.)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-W8E_101-7]Detection of Trapped Electron Distribution in Gate Insulator Using Displacement Current Measurements

〇Yuki Komatsubara1, Reika Ichihara1 (1.Frontier Technology R&D Institute, Kioxia Corporation)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-W8E_101-8]Improvement of TDDB in Sub-25 nm Gate-All-Around Vertical IGZO Transistor for 4F2 DRAM

〇Akinori Kamiyama1, Shoichi Kabuyanagi1, Masaya Toda1, Tomoharu Okada1, Takamasa Hamai1, Shosuke Fujii1 (1.Kioxia Corporation)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[15p-W8E_101-9]Reconsideration of SiO2 dielectric breakdown mechanism - a difference between dry- and wet- SiO2 -

〇Akira Toriumi1 (1.None)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[15p-W8E_101-10]A Study on Energy Distribution of Post-stressed Interface States Using Spectroscopic Charge Pumping Method

〇Yutaro Masukawa1, Yuta Horiko1, Yuichiro Mitani1 (1.Tokyo City Univ.)
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[15p-W8E_101-11]Band-edge States Produced by Charging of Defects at Si/SiO2 Interface: Theoretical Study

〇Takashi Nakayama1, Shota Iizuka1, Hidehiro Asai1, Yusuke Chiashi1, Hiroshi Oka1, Takumi Inaba1, Kimihiko Kato1, Satoru Miyamoto1, Takahiro Mori1 (1.AIST)
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[15p-W8E_101-12]Decomposition of angle-selected STEM-EELS maps by NMF analysis: application to bandgap measurement of Al2O3 ultrathin layer within heterogeneous

〇Takanori Asano1, Manabu Tezura1, Hiroki Tanaka1 (1.Kioxia corp.)
5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[15p-W8E_101-13]First-principles studies of hole traps at GaN–SiO2 interface

〇Yuansheng Zhao1,2,3, Kenji Shiraishi1,4, Atsushi Oshiyama1,4 (1.IMASS Nagoya Univ., 2.QUEMIX, Inc., 3.Univ. of Tokyo, 4.CIES Tohoku Univ.)
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