[15p-W8E_101-1~13] 13.3 Insulator technology

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[15p-W8E_101-11] Band-edge States Produced by Charging of Defects at Si/SiO₂ Interface: Theoretical Study

〇Takashi Nakayama¹, Shota Iizuka¹, Hidehiro Asai¹, Yusuke Chiashi¹, Hiroshi Oka¹, Takumi Inaba¹, Kimihiko Kato¹, Satoru Miyamoto¹, Takahiro Mori¹ (1.AIST)

Keywords:

Si/SiO2 interface,charged defect,band-edge state

In the field of quantum computing, the use of MOS-type Si devices is expected at low temperatures. Below 100 K, peculiar characteristics such as SS-value saturation and long-period noise in the current appear, and these are believed to be caused by Si band-edge states. However, the origin of the band-edge states is still unclear. In this presentation, we report the results clarified by our theoretical calculations that the charging of Si/SiO₂ interface defects can produce the band-edge states, and how these band-edge states depend on the defect and carrier densities.