[15p-W8E_101-1~13] 13.3 Insulator technology

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[15p-W8E_101-3] Atomic Scale Insights into Structures of Si Thermal Oxide/Si Interface

〇Hiroyuki Kageshima¹, Insung Seo¹, Toru Akiyama², Kenji Shiraishi³ (1.Shimane Univ., 2.Mie Univ., 3.Tohoku Univ.)

Keywords:

Si oxide,Si transport,First-principles calculation

We previously proposed a cristobalite/quartz/Si(100) interface model that effectively describes the characteristics of the Si thermal oxide film interface. Meanwhile, we have demonstrated that excess Si released toward the Si oxide film side plays a significant role in the Si thermal oxidation process. Therefore, in this study, we employed this two-layer oxide film model to investigate the transport pathways of excess Si within the oxide film and its associated energy changes via first-principles calculations.