[15p-W8E_101-1~13] 13.3 Insulator technology

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[15p-W8E_101-4] Effect of annealing < 200 ^oC in water vapor on reduction of OH groups in low-temperature Si oxide films

〇Susumu Horita¹, (M1) Makoto Kozasa², (B) Syouya Nagae², (B) Kouta Maruhashi², Youki Katamune², Akira Izumi² (1.JAIST, 2.Kyutech)

Keywords:

Low-temperature Si oxide film,OH group,NH3

It is desired that deposited Si oxide (SiOx) films are formed at lower temperature. But their dielectric property is gotten worse because a large amount of residual OH bonds exist in them. For this problem, we have been proposing using NH₃ and N₂ mixed species as an annealing gas because it is very effective for reduction of OH bonds. Further, adding water H₂O vapor to the mixed gas enhances the effect even at < 130 ^oC. This time, we annealed the SiOx films with only H₂O vapor without NH₃ at < 200 ^oC. As a result, surprisingly, we obtained a similar effect on OH reduction to the one with the NH₃ gas. Further, we tried to anneal SiOx films with only H₂O vapor followed by water-vapor-added NH₃ gas.