[15p-W8E_101-1~13] 13.3 Insulator technology

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[15p-W8E_101-5] Reaction mechanism of Si wet oxidation: Role of solid solution H₂O in SiO₂ layer

Gakuto Imaizumi¹, Yuki Okabe¹, Yasutaka Tsuda², Akitaka Yoshigoe², Yuji Takakuwa³, 〇Shuichi Ogawa¹ (1.Nihon Univ., 2.JAEA, 3.Tohoku Univ.)

Keywords:

Si oxide formation,wet oxidation,Real-time XPS

This study employs XPS to observe the wet oxidation process on an n-Si(001) surface in real time. The oxidation reaction mechanism is investigated based on the dependence of the oxide film thickness, Si oxidation state, Si-OH bond content, compressive strain (Si^α), and tensile strain (Si^β) on water vapor pressure.