Presentation Information
[15p-W8E_307-1]Development of High-Speed Growth Technology for SiC Bulk Single Crystals Using the Sublimation Method
〇Tomohisa Kato1, Taro Nishiguchi2, Yukio Nagahata3, Shigeyuki Kuboya1, Kazuma Eto1, Takafumi Ueno4, Akira Takeuchi5, Takeshi Mitani1, Kenji Momose3 (1.AIST, 2.Sumitomo Electric, 3.Resonac, 4.Mitsui Kinzoku, 5.Takeuchi Denki)
Keywords:
silicon carbide,bulk crystal growth,sublimation growth
The sublimation method is a mass production technology for SiC single crystal growth, and enhancing its efficiency is a top priority. This research aimed to accelerate growth and improve yield by re-examining the sublimation process. A sublimation furnace capable of exploring growth conditions up to high temperatures was developed. By investigating conditions such as 4H polytype stabilization and supersaturation, a growth rate of 2.4 to 2.9 mm/h was achieved at 2500°C. This research was conducted under a collaborative project at the Tsukuba Power Electronics Constellation (TPEC).