[15p-W8E_307-1~16] 15.6 Group IV Compound Semiconductors (SiC)

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[15p-W8E_307-11] Influence of defects in 4H-SiC epitaxial wafers on decay curves acquired by μ-PCD

〇Takumi Wakabayashi^1,3, Kazushi Hayashi², Hideo Fujii², Naoki Okano³, Junji Senzaki¹ (1.AIST, 2.Kobe Steel, LTD., 3.Kobelco Research Inst.)

Keywords:

semiconductor,SiC,carrier lifetime

Defect sites in a 4H-SiC epitaxial wafer were evaluated using the µ-PCD measurement, followed by detailed analysis of the decay curves. The analysis of decay curve behaviors for each defect type, taking into account both the structural characteristics of defects within the epitaxial layer and the carrier injection conditions, showed good agreement with the measurement results. This suggests that the approach is effective for structural characterization of individual defect types.