[15p-W8E_307-1~16] 15.6 Group IV Compound Semiconductors (SiC)

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[15p-W8E_307-13] Microscopic Structure of 3C-SiC/4H-SiC Stacked Epitaxial Cross-Section Formed by Simultaneous Lateral Epitaxy(SLE)

〇Hiroyuki Nagasawa^1,2, Masao Sakuraba², Michimasa Musya², Maho Abe², Takenori Tanno², Shigeo Sato² (1.CUSIC Inc., 2.RIEC Tohoku Univ.)

Keywords:

SiC,Epitaxy,Stacking Fault

Simultaneous lateral epitaxy(SLE) enables DPB-free 3C-SiC heteroepitaxial growth on 4H-SiC layers. In this study, we observe the stacking fault distribution in 3C-SiC/4H-SiC stacked epitaxial structures fabricated using the SLE method via cross-sectional TEM, and investigate the mechanisms of their formation and suppression.