[15p-W8E_307-1~16] 15.6 Group IV Compound Semiconductors (SiC)

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[15p-W8E_307-2] Growth of SiC bulk single crystals by sublimation method with anisotropic graphite

〇Shigeyuki Kuboya¹, Yukio Nagahata², Shunsuke Noguchi², Kazuma Eto¹, Takeshi Mitani¹, Yohei Fujikawa², Kenji Momose², Tomohisa Kato¹ (1.AIST, 2.Resonac)

Keywords:

SiC,sublimation method