[15p-W8E_307-1~16] 15.6 Group IV Compound Semiconductors (SiC)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-W8E_307-4] Formation of p-Type SiC Layer by Close-Spaced Sublimation Using Solution-Grown SiC as a Sublimation Source

〇(B)Heiji Kitano¹, Syuto Sugimoto¹, Tsutomu Sonoda², Kentaro Kutsukake^1,2, Shunta Harada^1,2, Yoshiyuki Yonezawa², Masashi Kato³, Toru Ujihara^1,2 (1.Grad. Sch. Eng. Nagoya Univ., 2.IMaSS Nagoya Univ., 3.Nagoya Inst. of Tech.)

Keywords:

4H-SiC,p-type SiC,Close-spaced sublimation