[15p-W8E_307-1~16] 15.6 Group IV Compound Semiconductors (SiC)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-W8E_307-5] Step-Bunching Relaxation Mechanism during Dissolution in Solution Growth of 4H-SiC

〇Shuto Sugimoto¹, Kutsukake Kentaro^1,2, Harada Shunta^1,2, Ujihara Toru^1,2 (1.Nagoya Univ., 2.IMaSS Nagoya Univ.)

Keywords:

crystal growth