[15p-W8E_307-1~16] 15.6 Group IV Compound Semiconductors (SiC)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-W8E_307-6] Analysis of Macrostep Propagation Angle in SiC Solution Growth Using Phase-field Method

〇Seiya Harada¹, Takahiro Ito¹, Kentaro Kutsukake^1,2, Shunta Harada^1,2, Hitoshi Miura³, Ujihara Toru^1,2 (1.Grad.Sch.Eng., Nagoya Univ., 2.IMaSS Nagoya Univ., 3.Grad.Sch.Sci., Nagoya City Univ.)

Keywords:

SiC,Phase field

We focused on the propagation angle of macrosteps, which is correlated with the incidence of solvent inclusion in the SiC solution growth method. Using the Phase-Field method, we investigated the influence of bulk carbon concentration on the propagation angle under conditions where the initial step height was kept constant. Numerical results revealed that both vertical growth rate and lateral advancement velocity increase with higher bulk carbon concentration; however, the propagation angle decreases because the lateral velocity is more significantly enhanced. Future work will involve examining the effects of other parameters, such as solution flow, to establish a comprehensive condition design for controlling the propagation angle.