[15p-W9_324-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[15p-W9_324-10] Observation of domain boundaries in β-Ga₂O₃(010) using phase-contrast microscopy

〇daiki katsube¹, Yongzhao Yao^1,2, Hirotaka Yamaguchi¹, Koji Sato¹, Kohei Sasaki³, Yukari Ishikawa¹ (1.JFCC, 2.Mie Univ., 3.Novel Crystal Technology Inc.)

Keywords:

Ga2O3,phase contrast microscopy,domain boundary