The 73rd JSAP Spring Meeting 2026
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Oral presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[15p-W9_324-1~14]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sun. Mar 15, 2026 1:30 PM - 5:15 PM JST
Sun. Mar 15, 2026 4:30 AM - 8:15 AM UTC
W9_324 (West Bldg. 9)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[15p-W9_324-1][The 47th Young Scientist Award Speech] Rocksalt-structured MgZnO-based UV-C lamp Emitting in 190-220 nm spectral range

〇Kotaro Ogawa1, Toshiki Mitomi1, Hideki Yajima2, Wataru Kosaka1, Hiroya Kusaka1, Go Kobayashi2, Tomohiro Yamaguchi1, Tohru Honda1, Kentaro Kaneko3, Shizuo Fujita3, Izumi Serizawa2, Takeyoshi Onuma1 (1.Kogakuin Univ., 2.ORC Manufacturing, 3.Kyoto Univ.)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[15p-W9_324-2]Impact of Mist Supply Method on Growth of Rocksalt-Structured MgZnO Films in Metastable Phase Composition Range

〇Kyosuke Tanaka1, Kotaro Ogawa1, Tomohiro Yamaguchi1, Tohru Honda1, Takeyoshi Onuma1 (1.Kogakuin Univ.)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[15p-W9_324-3]Optimization of MBE growth conditions for Gd2O3 with Bayesian Optimization

〇Kenshin Hori1,2, Tomohiro Inaba1, Xuejun Xu1, Yuki Wakabayashi1, Takuma Otsuka3, Takehiko Tawara4, Hideki Yamamoto1, Hiroo Omi2, Haruki Sanada1 (1.NTT Basic Research Labs., 2.Yamato Univ., 3.NTT communication Science Labs., 4.Nihon Univ.)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[15p-W9_324-4]Tin Oxide Thin-Film Deposition on Carbon Substrates by Mist CVD

〇Seiichiro Shima1, Mahiro Ushida1, Takuya Harada2, Junji Takada2, Isao Takahashi3, Kentaro Kaneko3,4 (1.Ritsumeikan Univ., 2.TOYO TANSO, 3.ROST Ritsumeikan Univ., 4.RISA)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[15p-W9_324-5]Luminescence study of defects in ZnO induced by reactive ion etching

〇Kohei Shima1, Shoji Ishibashi2, Akira Uedono3, Shigefusa Chichibu1 (1.IMRAM-Tohoku Univ., 2.CCS-Univ. of Tsukuba, 3.Univ. of Tsukuba)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[15p-W9_324-6]Conductance Method-Based Characterization of Schottky Interface in r-GeO2 SBDs

〇Shinpei Matsuda1, Yuri Shimizu1, Takayoshi Oshima2, Ai Kono1, Toyosuke Ibi1 (1.Patentix Inc., 2.NIMS)
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[15p-W9_324-7]Halide vapor phase epitaxy of c-plane α-Ga2O3 on an α-Cr2O3 template

〇Yuichi Oshima1, Takayoshi Oshima1, Shiyu Xiao2, Kazuto Murakami2, Katsuhiro Imai2, Takahiro Tomita2 (1.NIMS, 2.NGK INSULATORS, LTD)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[15p-W9_324-8]Structures and electronic states of misfit dislocations at α-Ga2O3/Al2O3(0001) interface

〇Toru Akiyama1,2, Koki Ishida1, Takahiro Kawamura1,2 (1.MIe Univ., 2.ICSDF Mie Univ.)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[15p-W9_324-9]Crystallographic TMAH wet etching on (010) β-Ga2O3

〇Takayoshi Oshima1 (1.NIMS)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[15p-W9_324-10]Observation of domain boundaries in β-Ga2O3(010) using phase-contrast microscopy

〇daiki katsube1, Yongzhao Yao1,2, Hirotaka Yamaguchi1, Koji Sato1, Kohei Sasaki3, Yukari Ishikawa1 (1.JFCC, 2.Mie Univ., 3.Novel Crystal Technology Inc.)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[15p-W9_324-11]Sheet resistance measurement of wide bandgap semiconductor layers using microwaves

Hikaru Ikeda1, Takeru Wakamatsu1, Yuki Isobe1, Katsuhisa Tanaka1, 〇Shizuo Fujita1, Hideo Sugaya2 (1.Kyoto Univ., 2.Panasonic)
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[15p-W9_324-12]Defect Level Behavior in β-Ga2O3 Homoepitaxial Films Annealed in Nitrogen

〇Yoshitaka Nakano1, Daiki Katsube2, Takashi Ogawa2, Yukari Ishikawa2, Kohei Sasaki3, Akito Kuramata3 (1.Chubu Univ., 2.JFCC, 3.Novel Crystal Technology)
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)English Presentation

[15p-W9_324-13]Photoluminescence Characterization of Color Centers in β-Ga2O3 Emitting in the Telecom O-Band

〇(D)Mathias Marchal1,2, Keidai Toyoshima1, Riena Jinno1, Satoshi Iwamoto1 (1.Univ. of Tokyo, 2.Denmark Technical Univ.)
5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[15p-W9_324-14]Fabrication of Ga2O3 Air DBR Cavity Structures by the HEATE Method and Characterization of Reflectance Properties of Stand Alone DBR Structures

〇Sotaro Iijima1, Yuki Takahashi1, Akihiko Kikuchi1,2 (1.Sophia Univ, 2.Sophia Semiconductor Research Inst)
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