[15p-W9_324-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[15p-W9_324-14] Fabrication of Ga2O3 Air DBR Cavity Structures by the HEATE Method and Characterization of Reflectance Properties of Stand Alone DBR Structures

〇Sotaro Iijima¹, Yuki Takahashi¹, Akihiko Kikuchi^1,2 (1.Sophia Univ, 2.Sophia Semiconductor Research Inst)

Keywords:

Anisotropic etching of gallium oxide

Gallium oxide (Ga2O3) has attracted considerable attention as a promising material for next generation electronic and photonic devices owing to its wide bandgap and the availability of high quality single crystal substrates. In this study, high aspect ratio vertical etching was performed on (010) oriented beta Ga2O3 using the hydrogen assisted thermal etching (HEATE) method, and Ga2O3 air distributed Bragg reflector (DBR) cavity structures exhibiting high reflectivity in the visible region were fabricated. The fabricated structures were characterized in terms of their morphology, and the reflectance properties of the DBR structures are reported.