[15p-W9_324-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[15p-W9_324-6] Conductance Method-Based Characterization of Schottky Interface in r-GeO2 SBDs

〇Shinpei Matsuda¹, Yuri Shimizu¹, Takayoshi Oshima², Ai Kono¹, Toyosuke Ibi¹ (1.Patentix Inc., 2.NIMS)

Keywords:

Rutile-Type Germanium Dioxide,Schottky Barrier Diode,Conductance Method

In the I-V characteristics of r-GeO₂ SBDs reported in 2025, the turn-on voltage was approximately 1.5 V, which is about half of the predicted value, and a dispersion of over two orders of magnitude in ON-current was observed on the same substrate. Schottky interface analysis using the conductance method revealed an inverse relationship between the time constant required for charging/discharging the trap levels and the ON-current. We propose a forward current model in which the electron tunneling process into the trap levels at the Schottky interface is the rate-limiting step.