[15p-W9_324-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[15p-W9_324-8] Structures and electronic states of misfit dislocations at α-Ga₂O₃/Al₂O₃(0001) interface

〇Toru Akiyama^1,2, Koki Ishida¹, Takahiro Kawamura^1,2 (1.MIe Univ., 2.ICSDF Mie Univ.)

Keywords:

Ga2O3,dislocations,first-principles calculations