[15p-WL2_101-1~13] 6.3 Oxide electronics

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[15p-WL2_101-12] Operando laser-based photoemission electron microscopy for VO₂ selector devices

〇Hirokazu Fujiwara^1,2, Cedric Bareille³, Mario Okawa³, Toshiyuki Taniuchi^1,2 (1.GSFS, Univ. of Tokyo, 2.MIRC, Univ. of Tokyo, 3.ISSP, Univ. of Tokyo)

Keywords:

selector,photoemission electron microscopy,operando observation

High-performance selector devices are essential for suppressing sneak path current in cross-point memory. In this study, we employed laser-based photoemission electron microscopy which is sensitive to electronic states near the Fermi level using a deep ultraviolet laser to perform operando observation of the metal-insulator transition in a VO₂ selector device through the top electrode. We successfully observed changes in PEEM image distortion caused by the voltage applied to the device, demonstrating the potential for visualizing the metallic region.