[15p-WL2_101-1~13] 6.3 Oxide electronics

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[15p-WL2_101-13] Temperature Dependence of Resistance in Mott Transition Switching of Carbon-Doped NiOx Thin Films Prepared by Mist CVD

〇Masamichi Azuma^1,2, Tsubasa Miyamoto¹, Yutaka Murakami¹, Hiroyuki Nishinaka¹ (1.Kyoto Inst. of Tech., 2.Symetrix Corp.)

Keywords:

CeRAM (Correlated electron Random Access Memory),carbon-doped,Nickel Oxide (NiOx) thin film

Doping carbon into NiOx thin films, a Mott-Hubbard insulator, significantly reduces the band gap and exhibits a nonpolar metal-insulator switching phenomenon, believed to be the Mott transition, upon application of voltage. A strongly correlated electron random access memory (CeRAM) utilizing this phenomenon has been proposed. In this paper, we fabricate carbon-doped NiOx thin films using the mist CVD method and report on the temperature dependence of resistance change during switching, confirming that metal-insulator switching occurs up to temperatures as high as 200°C.