[15p-WL2_101-1~13] 6.3 Oxide electronics

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-WL2_101-4] Low-Temperature RF Switching Device Using the Metal-Insulator Phase Transition of VO2 thin films

〇Harutaka Koyama^1,2, Hiroshi Oike², Keisuke Shibuya³, Takanobu Watanabe¹, Yusuke Kozuka^1,2,4 (1.Waseda Univ, 2.NIMS, 3.AIST, 4.AIMR Tohoku Univ)

Keywords:

Quantum computer,VO2,Metal-insulator phase transition

In quantum computers, RF signals are used to control qubits. As the number of qubits increases, numerous coaxial cables are deployed both inside and outside the cryostat. These numerous cables not only introduce heat influx but also contribute to the limited space within the cryostat. This study focused on developing RF switching devices operable within cryostats. We fabricated and characterized RF switching devices using W-doped VO2 (W:VO2) capable of functioning in cryogenic environments.