[15p-WL2_101-1~13] 6.3 Oxide electronics

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)English Presentation

[15p-WL2_101-6] Electronic and electrical states of HfO₂/β-Ga₂O₃ interfaces

〇(D)Abul Tooshil^1,2, Takahiro Nagata¹, Masaharu Watanabe^1,3, Yoshiyuki Yamashita^1,2 (1.NIMS, 2.Kyushu University, 3.Meiji University)

Keywords:

HAXPES,Interface,HfO2/beta-Ga2O3

The electronic and electrical states of the HfO₂/β-Ga₂O₃ interface were investigated using hard x-ray photoelectron spectroscopy (HAXPES) and current-voltage (I-V) measurements. HAXPES analysis of Ga 2p_3/2 and Hf 3d_5/2 core levels showed no additional chemical states at different take-off angles, indicating uniform electronic states at the interface. Electrical measurements of Pt/HfO₂/β-Ga₂O₃structures exhibited low leakage current and no breakdown up to 15 V, demonstrating good insulating behavior of the HfO₂ layer.