講演情報
[15p-WL2_101-6]Electronic and electrical states of HfO2/β-Ga2O3 interfaces
〇(D)Abul Tooshil1,2, Takahiro Nagata1, Masaharu Watanabe1,3, Yoshiyuki Yamashita1,2 (1.NIMS, 2.Kyushu University, 3.Meiji University)
キーワード：
HAXPES、Interface、HfO2/beta-Ga2O3
The electronic and electrical states of the HfO2/β-Ga2O3 interface were investigated using hard x-ray photoelectron spectroscopy (HAXPES) and current-voltage (I-V) measurements. HAXPES analysis of Ga 2p3/2 and Hf 3d5/2 core levels showed no additional chemical states at different take-off angles, indicating uniform electronic states at the interface. Electrical measurements of Pt/HfO2/β-Ga2O3structures exhibited low leakage current and no breakdown up to 15 V, demonstrating good insulating behavior of the HfO2 layer.