[15p-WL2_101-1~13] 6.3 Oxide electronics

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-WL2_101-7] Evaluation of Forward Current–Voltage Characteristics in (La_1-xSr_x)VO₃/n-Si Junctions

〇(M1)Koji Iwasaki¹, Ryosuke Takagi¹, Shuhei Hashimoto¹, Kaito Hujitani¹, Yasushi Hotta¹ (1.Hyogo Univ.)

Keywords:

transition metal oxide,strongly correlated electron systems,silicon

We aim to realize highly functional Si devices by integrating strong correlation electron (SCES) materials with rich electronic properties onto Si devices. However, the electronic transport characteristics at the interface, which are crucial for device realization, remained unclear. In this study, we bonded the SCES (La_1-xSr_x)VO₃ to an n-Si substrate and investigated in detail the electron transport in the lower Hubbard band of the SCES and the Si conductor using current-voltage measurements and the Thomas-Symonds equation. We present the results of electron transport phenomena that cannot be explained by conventional Schottky junctions.