[15p-WL2_401-1~13] 6.2 Carbon-based thin films

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[15p-WL2_401-1] [The 10th Thin Film and Surface Physics DivisionYoung Researcher Award Speech] Demonstration of inversion channel diamond MOSFET with step-free interface using lateral growth

〇Kazuki Kobayashi¹, Sato Kai¹, Kato Hitomitsu², Ogura Masahiko², Makino Toshiharu², Matsumoto Tsubasa¹, Ichikawa Kimiyoshi¹, Hayashi Kan¹, Inokuma Takao¹, Yamasaki Satoshi¹, Christoph Nebel^1,3, Tokuda Norio¹ (1.Kanazawa Univ., 2.AIST, 3.Diacara)

Keywords:

diamond,inversion channel MOSFET,interface

The primary challenges for inversion channel diamond MOSFET are the high interface state density (D_it), mainly attributed to step edges, and the resulting low field-effect mobility (µ_FE). In this study, we fabricated a MOSFET with step-free Al2O3/diamond interface using lateral growth technology. As a result, we achieved a reduction in D_it and an improvement in µ_FE. Furthermore, we clarified issues regarding device yield for practical applications.