The 73rd JSAP Spring Meeting 2026
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Session Details

Oral presentation6 Thin Films and Surfaces : 6.2 Carbon-based thin films

[15p-WL2_401-1~13]6.2 Carbon-based thin films

Sun. Mar 15, 2026 1:30 PM - 5:15 PM JST
Sun. Mar 15, 2026 4:30 AM - 8:15 AM UTC
WL2_401 (West Lecture Bldg. 2)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[15p-WL2_401-1][The 10th Thin Film and Surface Physics DivisionYoung Researcher Award Speech] Demonstration of inversion channel diamond MOSFET with step-free interface using lateral growth

〇Kazuki Kobayashi1, Sato Kai1, Kato Hitomitsu2, Ogura Masahiko2, Makino Toshiharu2, Matsumoto Tsubasa1, Ichikawa Kimiyoshi1, Hayashi Kan1, Inokuma Takao1, Yamasaki Satoshi1, Christoph Nebel1,3, Tokuda Norio1 (1.Kanazawa Univ., 2.AIST, 3.Diacara)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-WL2_401-2]Fabrication of Vertical V-shaped Trench Gate Inversion-mode Diamond MOSFET

〇(D)Yuto Nakamura1, Nagai Masatsugu2, Kobayashi Kazuki1, Hayashi Kan1, Ichikawa Kimiyoshi1, Matsumoto Tsubasa1, Inokuma Takao1, Yamasaki Satoshi1, Makino Toshiharu2, Tokuda Norio1 (1.Kanazawa Univ., 2.AIST)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[15p-WL2_401-3]High-Current Operation and High-Speed Switching Characterization of H-Terminated Diamond MOSFETs

〇Keita Takaesu1, Daisuke Nakagawa1, Daisuke Sano1, Toshimitsu Kobori1, Shuji Murai1, Noma Kyota1, Daisuke Takeuchi2, Toshiharu Makino2, Hitoshi Umezawa2 (1.Honda R&D Co.,Ltd., 2.AIST)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-WL2_401-4]Fabrication and evaluation of radiation resistance of NOT and NAND gates using hydrogen-terminated diamond field-effect transistors

〇(M2)Asahi Okuno1, Yuhei Seki1, Hitoshi Umezawa2, Yosuke Ito1,3, Junichi H.Kaneko1,3 (1.Hokkaido Univ., 2.AIST., 3.Ookuma Diamond Device.)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[15p-WL2_401-5]Radiation hardness of H-diamond MOSFET using self-aligned CaF2/Cu-gate method

〇Hiroyuki Kawashima1, Yousuke Ito1,2, Kengo Oda2, Takahiro Yamaguchi1,2, Hitoshi Umezawa1, Junichi Kaneko1,2, Sadao Takeuchi3, Naohisa Hoshikawa1 (1.OOKUMA DIAMOND DEVICE Co., Ltd., 2.Hokkaido Univ., 3.NIT)
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[15p-WL2_401-6]Effect of bonding layer in GaN on Diamond Devices

〇(D)Yusuke Shirayanagi1,2, Takeo Furuhata1, Shingo Tomohisa1, Keiji Kasamura2, Hiroki Toyoda2, Takashi Matsumae3, Yuichi Kurashima3, Hideki Takagi3, Akihisa Kubota2, Takashi Takenaga1 (1.Mitsubishi Electric, 2.Kumamoto univ., 3.AIST)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[15p-WL2_401-7]Formation of Low-Resistance Layer by High-Concentration N Ion Implantation (II)

〇Yasushi Hoshino1, Kaiya Imamura1, Yuhei Seki1,2, Sakura Uehara2, Junichi Kaneko2 (1.Kanagawa Univ., 2.Hokkaido Univ.)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[15p-WL2_401-8]Selective homoepitaxial growth of buried diamond films with NV centers

〇Kan Hayashi1,2,3, Nakamura Yuto2, Katayama Madoka2, Shimamura Kazutoshi4, Yoshida Riku2, Kobayashi Kazuki1, Ichikawa Kimiyoshi1,2, Yoshikawa Taro1,5, Matsumoto Tsubasa1,2, Inokuma Takao1,2, Yamasaki Satoshi1,2, Christoph Nebel6, Tokuda Norio1,2,3 (1.Kanazawa Univ. ARCDia, 2.Kanazawa Univ., 3.KU-FUSION, 4.Eng. and Tech. Dept., Kanazawa Uni., 5.Dicel, 6.Diacara)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-WL2_401-9]Formation of high-density nitrogen delta-doping diamond layer via point-arc plasma chemical vapor deposition method

〇Shota Kikumoto1,2, Kazuki Abe1,2, Naragino Hiroshi2, Yoshitake Tsuyoshi2, Kageura Taisuke1 (1.AIST, 2.IGSES, Kyushu Univ.)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[15p-WL2_401-10]Effects of Solid Particle Attachment to Substrate Surfaces on CVD Single-Crystal Diamond Growth

〇Kaishu Nitta1, Takehiro Shimaoka1, Hideaki Yamada1, Akiyoshi Chayahara1, Nobuteru Tsubouchi1, Yoshiaki Mokuno1 (1.AIST)
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[15p-WL2_401-11]Metal impurity incorporation in homoepitaxial diamond growth by hot-filament CVD

〇Kimiyoshi Ichikawa1, Kazuki Kobayashi1, Tsubasa Matsumoto1, Kan Hayashi1, Takao Inokuma1, Satoshi Yamasaki1, Norio Tokuda1 (1.Kanazawa Univ.)
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-WL2_401-12]Epitaxial Growth of Diamond on Ir/ Sapphire Substrate

〇(DC)Masahiro Tsuji1, Masanori Eguchi2, Saha Niloy Chandra1, Makoto Kasu1,3 (1.Diamond Semiconductor Research Center, Saga Univ., 2.Synchrotron Research Center, Saga Univ., 3.Diamond Semiconductor Co., Ltd.)
5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-WL2_401-13]Direct Diamond Growth on Insulating MgO Substrates

〇Makoto Takayanagi1, Yuta Izu2, Yukihiro Sakamoto2, Kei Ikeda1, Kaoru Yagishita1, Hiraku Maruyama1, Tomofumi Susaki1 (1.Mitsubishi Chemical Corp., 2.CIT)
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