[15p-WL2_401-1~13] 6.2 Carbon-based thin films

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[15p-WL2_401-11] Metal impurity incorporation in homoepitaxial diamond growth by hot-filament CVD

〇Kimiyoshi Ichikawa¹, Kazuki Kobayashi¹, Tsubasa Matsumoto¹, Kan Hayashi¹, Takao Inokuma¹, Satoshi Yamasaki¹, Norio Tokuda¹ (1.Kanazawa Univ.)

Keywords:

Diamond,Hot-filament CVD,Homoepitaxial growth

The incorporation behavior of tantalum (Ta) impurities during diamond homoepitaxial growth by hot-filament chemical vapor deposition (HFCVD) was investigated. To exclude the influence of grain boundaries inherent in polycrystalline growth, we performed SIMS analysis on epitaxial films grown on (111) and (100) substrates. The results showed that the Ta concentration in the films increased as the methane concentration decreased for both orientations. Furthermore, it was found that Ta incorporation was higher in (100) growth than in (111) growth. These dependencies will be discussed from the perspective of flux based on the fundamental principles of CVD.