Presentation Information

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[15p-WL2_401-2]Fabrication of Vertical V-shaped Trench Gate Inversion-mode Diamond MOSFET

〇(D)Yuto Nakamura¹, Nagai Masatsugu², Kobayashi Kazuki¹, Hayashi Kan¹, Ichikawa Kimiyoshi¹, Matsumoto Tsubasa¹, Inokuma Takao¹, Yamasaki Satoshi¹, Makino Toshiharu², Tokuda Norio¹ (1.Kanazawa Univ., 2.AIST)

Keywords:

Power devices,Vertical trench MOSFET,Normally-off

Vertical trench diamond MOSFETs are expected to offer low-loss performance, with normally-off operation being essential for safety reasons. Since the (111) plane is optimal for inversion-channel MOSFETs, the trench sidewalls must consist of {111} planes. In this study, we demonstrated the operation of an inversion-channel vertical trench MOSFET using our developed technique for forming {111} trenches via crystallographic anisotropic etching of diamond. The fabricated devices exhibited clear FET characteristics, and normally-off operation was confirmed.

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