[15p-WL2_401-1~13] 6.2 Carbon-based thin films

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[15p-WL2_401-3] High-Current Operation and High-Speed Switching Characterization of H-Terminated Diamond MOSFETs

〇Keita Takaesu¹, Daisuke Nakagawa¹, Daisuke Sano¹, Toshimitsu Kobori¹, Shuji Murai¹, Noma Kyota¹, Daisuke Takeuchi², Toshiharu Makino², Hitoshi Umezawa² (1.Honda R&D Co.,Ltd., 2.AIST)

Keywords:

Diamond,MOSFET,Switching Characterization

Diamond is regarded as the ultimate semiconductor material due to its intrinsic properties, and its application to high-efficiency power devices has been widely anticipated. However, a major challenge remains in that the current level achievable in switching devices such as transistors is still limited. Last year, we demonstrated for the first time the switching operation of a diamond MOSFET at the ampere-class level. In this work, we report further improvements, achieving enhanced current density and an updated maximum drain current.