Presentation Information
[15p-WL2_401-4]Fabrication and evaluation of radiation resistance of NOT and NAND gates using hydrogen-terminated diamond field-effect transistors
〇(M2)Asahi Okuno1, Yuhei Seki1, Hitoshi Umezawa2, Yosuke Ito1,3, Junichi H.Kaneko1,3 (1.Hokkaido Univ., 2.AIST., 3.Ookuma Diamond Device.)
Keywords:
diamond,digital curcuit,radiation resistance
