[15p-WL2_401-1~13] 6.2 Carbon-based thin films

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[15p-WL2_401-5] Radiation hardness of H-diamond MOSFET using self-aligned CaF₂/Cu-gate method

〇Hiroyuki Kawashima¹, Yousuke Ito^1,2, Kengo Oda², Takahiro Yamaguchi^1,2, Hitoshi Umezawa¹, Junichi Kaneko^1,2, Sadao Takeuchi³, Naohisa Hoshikawa¹ (1.OOKUMA DIAMOND DEVICE Co., Ltd., 2.Hokkaido Univ., 3.NIT)

Keywords:

Diamond,MOSFET,Radiation hardness

Diamond devices are expected to be applied in harsh environments such as nuclear reactors. In this study, the X-ray radiation tolerance of diamond MOSFETs fabricated using a self-aligned gate process, which enables easy device miniaturization, was investigated. These diamond MOSFETs employed a CaF₂/Cu gate insulator and electrode. X-ray irradiation up to a total dose of 10 MGy was performed, and the devices maintained electrical characteristics comparable to those before irradiation up to 3 MGy.