Presentation Information
[15p-WL2_401-6]Effect of bonding layer in GaN on Diamond Devices
〇(D)Yusuke Shirayanagi1,2, Takeo Furuhata1, Shingo Tomohisa1, Keiji Kasamura2, Hiroki Toyoda2, Takashi Matsumae3, Yuichi Kurashima3, Hideki Takagi3, Akihisa Kubota2, Takashi Takenaga1 (1.Mitsubishi Electric, 2.Kumamoto univ., 3.AIST)
Keywords:
Diamond,bonding layer,Extend Surface Activated Bonding
Gallium nitride (GaN) based high electron mobility transistors (GaN-HEMTs) are widely used as power amplifying device for high power and high frequency application. Since GaN-HEMTs generate much heat during the operation, so-called “hot-spot” could be generated at the active region in the transistors, which derives deterioration in the performance.
As a solution to this challenge, research on GaN on Diamond (GoD), which applies diamond with high thermal conductivity as a heat dissipating substrate for GaN, is actively being pursued. We successfully bonded GaN and diamond using an extended surface activated bonding method that employs a Si film as the bonding layer.
While the bonding layer contributes to improving bonding strength, it also presents the challenge of increasing the thermal boundary resistance of the bonded device. In this presentation, we report the structural evaluation results of the bonding interface of GoD and provide an analysis of the bonding mechanism influenced by the bonding layer, aiming to clarify its effect on the bonding process.
As a solution to this challenge, research on GaN on Diamond (GoD), which applies diamond with high thermal conductivity as a heat dissipating substrate for GaN, is actively being pursued. We successfully bonded GaN and diamond using an extended surface activated bonding method that employs a Si film as the bonding layer.
While the bonding layer contributes to improving bonding strength, it also presents the challenge of increasing the thermal boundary resistance of the bonded device. In this presentation, we report the structural evaluation results of the bonding interface of GoD and provide an analysis of the bonding mechanism influenced by the bonding layer, aiming to clarify its effect on the bonding process.