[15p-WL2_401-1~13] 6.2 Carbon-based thin films

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[15p-WL2_401-7] Formation of Low-Resistance Layer by High-Concentration N Ion Implantation (II)

〇Yasushi Hoshino¹, Kaiya Imamura¹, Yuhei Seki^1,2, Sakura Uehara², Junichi Kaneko² (1.Kanagawa Univ., 2.Hokkaido Univ.)

Keywords:

ion implantation,doping