[16a-M_178-1~11] 17.3 Layered materials

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[16a-M_178-4] Device performance of wafer-scale WSe₂ FET grown by CVD

〇Toshimasa Ishii¹, Ryuichi Nakajima¹, Keisuke Atsumi¹, Tomonori Nishimura¹, Kaito Kanahashi¹, Takahiko Endo², Yasumitsu Miyata², Kosuke Nagashio¹ (1.The Univ. of Tokyo, 2.NIMS)

Keywords:

WSe2,wafer scale,p-type FET

We evaluated the performance of FET with wafer-scale WSe₂.