[16a-M_178-1~11] 17.3 Layered materials | The 73rd JSAP Spring Meeting 2026

Advanced Search

Session Details

Oral presentation17 Nanocarbon and Two-Dimensional Materials : 17.3 Layered materials

[16a-M_178-1~11]17.3 Layered materials

Mon. Mar 16, 2026 9:00 AM - 12:00 PM JST
Mon. Mar 16, 2026 12:00 AM - 3:00 AM UTC

M_178 (Main Bldg.)

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[16a-M_178-1]A study of resistance change phenomenon in graphene/corannulene/graphene stacked structure

〇Ryoichi Kawai¹, Kaneko Shion¹, Katsumata Ryosuke¹, Fujie Reika¹, Tabata Kana¹, Kim Hyunjun¹, Kirihara Yoshiharu¹, Kimizima Kaito¹, Nohira Hiroshi¹, Ishikawa Ryousuke¹, Mitani Yuichiro¹ (1.Tokyo City Univ.)

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[16a-M_178-2]Electrical characteristics associated with structural differences in wire-like Sumanene and Corannulene

〇Ryosuke Katsumata¹, Ryoichi Kawai¹, Reika Fujie¹, Kana Tabata¹, Kaito Kimishima¹, Shion Kaneko¹, Hyunjun Kim¹, Yoshiharu Kirihara¹, Hiroshi Nohira¹, Ryousuke Ishikawa¹, Yuichiro Mitani¹ (1.Tokyo city Univ.)

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[16a-M_178-3]Effect of Stacked Graphene/Sumanene/Graphene Structure on Resistive Switching Characteristics

〇Kana Tabata¹, Ryoichi Kawai¹, Reika Fujie¹, Ryosuke Katsumata¹, Kaito Kimishima¹, Shion Kaneko¹, Hyunjun KiM¹, Hiroshi Nohira¹, Ryosuke Ishikawa¹, Yuichiro Mitani¹ (1.Tokyo City Univ.)

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[16a-M_178-4]Device performance of wafer-scale WSe₂ FET grown by CVD

〇Toshimasa Ishii¹, Ryuichi Nakajima¹, Keisuke Atsumi¹, Tomonori Nishimura¹, Kaito Kanahashi¹, Takahiko Endo², Yasumitsu Miyata², Kosuke Nagashio¹ (1.The Univ. of Tokyo, 2.NIMS)

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)English Presentation

[16a-M_178-5]Transfer-free top-gate MoS₂ FETs using MOCVD-MoS₂ wafers

〇Juiteng Chang¹, Shuhong Li¹, Kosei Matsumoto¹, Hiroyasu Maekawa¹, Tomonori Nishimura¹, Kaito Kanahashi¹, Yoshiki Sakuma², Takahiro Nagata², Kosuke Nagashio¹ (1.U. Tokyo, 2.NIMS)

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[16a-M_178-6]On the p-n control of molybdenum disulfide thin films by sputtering and CMOS improving the performance by Annealing.

〇Masamichi Tsuchida¹, Xu Chenghao¹, Humiki Hitomi¹, Kousaku Shimizu¹ (1.Nihon Univ.)

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[16a-M_178-7]Developer tolerance of PVD-grown MoS₂ films

〇Kotaro Kobayashi¹, Jaehyo Jang¹, Naoki Matsunaga¹, Shunsuke Nozawa¹, Hitoshi Wakabayashi¹ (1.Science Tokyo)

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[16a-M_178-8]Hysteresis Mechanisms in TaO_x gated-MoS₂FETs

〇(M2)YUTARO SAHASHI¹, Ryotaro Aso², Yuto Tomita², Che-Yi Lin³, Mitsuru Inada¹, Keiji Ueno⁴, Yen-Fu Lin³, Mahito Yamamoto¹ (1.Kansai Univ., 2.Kyushu Univ., 3.National Chung-Hsing Univ., 4.Saitama Univ.)

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[16a-M_178-9]Control of Atmospheric Molecular Adsorption–Induced Doping Mechanisms in Two-Dimensional Material–Based Field-Effect Transistors

〇Takumi Yoshida¹, Rintaro Narita¹, Taichi Umehara¹, Yasushi Ishiguro², Kazuyuki Takai¹ (1.Hosei Univ., 2.National Defense Acad.)

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[16a-M_178-10]Lateral Structure Memristor-Based Gas Sensor Using WS₂

〇Haruki Goda¹, Takashi Ikuta¹, Takahisa Tanaka¹ (1.Keio Univ.)

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)English Presentation

[16a-M_178-11]Viologen Radical Modified MoS2 Transistors Enabling Memristive Behavior

〇Huiqin Liu¹, Durgadevi Elamaran¹, Guanting Liu¹, Daisuke Kiriya¹ (1.Univ. of Tokyo)

Back to Category List