[16a-M_178-1~11] 17.3 Layered materials

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[16a-M_178-6] On the p-n control of molybdenum disulfide thin films by sputtering and CMOS improving the performance by Annealing.

〇Masamichi Tsuchida¹, Xu Chenghao¹, Humiki Hitomi¹, Kousaku Shimizu¹ (1.Nihon Univ.)

Keywords:

two dimensional material,Molybdenum sulfide,Thin-film transistors

Currently, transition metal dichalcogenides (TMDCs), which are layered materials, are attracting attention as electronic devices. At present, we are studying the enhancement of CMOS performance of molybdenum disulfide (MoS₂). In a previous report, we fabricated a CMOS and reported the transfer characteristics of each TFT that composes it. In this report, we examined the sulfurization process aiming to reduce the OFF current of TFTs in order to improve the performance of CMOS.