[16a-M_178-1~11] 17.3 Layered materials

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[16a-M_178-8] Hysteresis Mechanisms in TaO_x gated-MoS₂FETs

〇(M2)YUTARO SAHASHI¹, Ryotaro Aso², Yuto Tomita², Che-Yi Lin³, Mitsuru Inada¹, Keiji Ueno⁴, Yen-Fu Lin³, Mahito Yamamoto¹ (1.Kansai Univ., 2.Kyushu Univ., 3.National Chung-Hsing Univ., 4.Saitama Univ.)

Keywords:

2D semiconductor FETs,TaOx,hysteresis